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Dual-metal precursors for the universal growth of non-layered 2D transition metal chalcogenides with ordered cation vacancies 期刊论文
SCIENCE BULLETIN, 2022, 卷号: 67, 期号: 16, 页码: 1649-1658
作者:  Tan, Junyang;  Zhang, Zongteng;  Zeng, Shengfeng;  Li, Shengnan;  Wang, Jingwei;  Zheng, Rongxu;  Hou, Fuchen;  Wei, Yinping;  Sun, Yujie;  Zhang, Rongjie;  Zhao, Shilong;  Nong, Huiyu;  Chen, Wenjun;  Gan, Lin;  Zou, Xiaolong;  Zhao, Yue;  Lin, Junhao;  Liu, Bilu;  Cheng, Hui -Ming
收藏  |  浏览/下载：65/0  |  提交时间：2023/05/09
Non-layered two-dimensional materials  Transition metal chalcogenides  Dual-metal precursors  Chemical vapor deposition  Ordered cation vacancies  
Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors 期刊论文
ACS NANO, 2021, 卷号: 15, 期号: 4, 页码: 7340-7347
作者:  Zou, Jingyun;  Cai, Zhengyang;  Lai, Yongjue;  Tan, Junyang;  Zhang, Rongjie;  Feng, Simin;  Wang, Gang;  Lin, Junhao;  Liu, Bilu;  Cheng, Hui-Ming
收藏  |  浏览/下载：117/0  |  提交时间：2021/10/15
2D materials  molybdenum disulfide  MoS2  vanadium  substitutional doping  synaptic transistor