Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors

doi:10.1021/acsnano.1c00596

IMR OpenIR

	Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors
	Zou, Jingyun 1,2; Cai, Zhengyang 1,2; Lai, Yongjue 1,2; Tan, Junyang 1,2; Zhang, Rongjie 1,2; Feng, Simin 1,2; Wang, Gang 3; Lin, Junhao 3; Liu, Bilu 1,2; Cheng, Hui-Ming 1,2,4
通讯作者	Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(hmcheng@sz.tsinghua.edu.cn)
	2021-04-27
发表期刊	ACS NANO
ISSN	1936-0851
卷号	15 期号:4 页码:7340-7347
摘要	Doping is an effective way to modify the electronic property of two-dimensional (2D) materials and endow them with additional functionalities. However, wide-range control of the doping concentrations in monolayer 2D materials with large-scale uniformity remains challenging. Here, we report in situ chemical vapor deposition growth of vanadium-doped monolayer molybdenum disulfide (MoS2) with widely tunable doping concentrations ranging from 0.3 to 13.1 atom %. The key to regulate the doping concentration lies in the use of appropriate vanadium precursors with different doping abilities, which also generate large-scale uniform doping to MoS2. Artificial synaptic transistors were fabricated using the heavily doped MoS2 as the channel material. Synaptic potentiation, depression, and repetitive learning processes were mimicked by the gate-tunable changes of channel conductance in such transistors with abundant vanadium atoms to trap/detrap electrons. This work develops a feasible method to dope monolayer 2D semiconductors and demonstrates their applications in artificial synaptic transistors.
关键词	2D materials molybdenum disulfide MoS2 vanadium substitutional doping synaptic transistor
资助者	National Natural Science Foundation of China ; Youth 1000-Talent Program of China, Guangdong Innovative and Entrepreneurial Research Team Program ; Bureau of Industry and Information Technology of Shenzhen ; Shenzhen Basic Research Project ; Presidential fund ; Development and Reform Commission of Shenzhen Municipality
DOI	10.1021/acsnano.1c00596
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[51920105002] ; National Natural Science Foundation of China[51991340] ; National Natural Science Foundation of China[51991343] ; National Natural Science Foundation of China[51722206] ; National Natural Science Foundation of China[11974156] ; Youth 1000-Talent Program of China, Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Youth 1000-Talent Program of China, Guangdong Innovative and Entrepreneurial Research Team Program[2019ZT08C044] ; Bureau of Industry and Information Technology of Shenzhen[201901171523] ; Shenzhen Basic Research Project[JCYJ20200109144620815] ; Shenzhen Basic Research Project[JCYJ20200109144616617] ; Shenzhen Basic Research Project[KQTD20190929173815000] ; Presidential fund ; Development and Reform Commission of Shenzhen Municipality
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:000645436800119
出版者	AMER CHEMICAL SOC
引用统计	被引频次：87[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/161574
专题	中国科学院金属研究所
通讯作者	Liu, Bilu; Cheng, Hui-Ming
作者单位	1.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Shenzhen Int Grad Sch, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China 2.Tsinghua Univ, Inst Mat Res, Tsinghua Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China 3.Southern Univ Sci & Technol, Dept Phys, SUSTech Core Res Facil, Shenzhen 518055, Peoples R China 4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Zou, Jingyun,Cai, Zhengyang,Lai, Yongjue,et al. Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors[J]. ACS NANO,2021,15(4):7340-7347.
APA	Zou, Jingyun.,Cai, Zhengyang.,Lai, Yongjue.,Tan, Junyang.,Zhang, Rongjie.,...&Cheng, Hui-Ming.(2021).Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors.ACS NANO,15(4),7340-7347.
MLA	Zou, Jingyun,et al."Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors".ACS NANO 15.4(2021):7340-7347.