Dual-metal precursors for the universal growth of non-layered 2D transition metal chalcogenides with ordered cation vacancies

doi:10.1016/j.scib.2022.06.022

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	Dual-metal precursors for the universal growth of non-layered 2D transition metal chalcogenides with ordered cation vacancies
	Tan, Junyang 1,2; Zhang, Zongteng 3; Zeng, Shengfeng 1,2; Li, Shengnan 1,2; Wang, Jingwei 1,2; Zheng, Rongxu 1,2; Hou, Fuchen 3; Wei, Yinping 1,2; Sun, Yujie 1,2; Zhang, Rongjie 1,2; Zhao, Shilong 1,2; Nong, Huiyu 1,2; Chen, Wenjun 1,2,4; Gan, Lin 1,2; Zou, Xiaolong 1,2; Zhao, Yue 3; Lin, Junhao 3; Liu, Bilu 1,2; Cheng, Hui -Ming 1,2,5,6
通讯作者	Zhao, Yue(zhaoy@sustech.edu.cn) ; Lin, Junhao(linjh@sustech.edu.cn) ; Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui -Ming(hmcheng@sz.tsinghua.edu.cn)
	2022-08-31
发表期刊	SCIENCE BULLETIN
ISSN	2095-9273
卷号	67 期号:16 页码:1649-1658
摘要	Two-dimensional (2D) transition metal chalcogenides (TMCs) are promising for nanoelectronics and energy applications. Among them, the emerging non-layered TMCs are unique due to their unsaturated dangling bonds on the surface and strong intralayer and interlayer bonding. However, the synthesis of non-layered 2D TMCs is challenging and this has made it difficult to study their structures and properties at thin thickness limit. Here, we develop a universal dual-metal precursors method to grow non-layered TMCs in which a mixture of a metal and its chloride serves as the metal source. Taking hexagonal Fe1-xS as an example, the thickness of the Fe1-xS flakes is down to 3 nm with a lateral size of over 100 mu m. Importantly, we find ordered cation Fe vacancies in Fe1-xS, which is distinct from layered TMCs like MoS2 where anion vacancies are commonly observed. Low-temperature transport measurements and theoretical calculations show that 2D Fe1-xS is a stable semiconductor with a narrow bandgap of similar to 60 meV. In addition to Fe1-xS, the method is universal in growing various non-layered 2D TMCs containing ordered cation vacancies, including Fe1-xSe, Co1-xS, Cr1-xS, and V1-xS. This work paves the way to grow and exploit properties of non-layered materials at 2D thickness limit. (C) 2022 Science China Press. Published by Elsevier B.V. and Science China Press. All rights reserved.
关键词	Non-layered two-dimensional materials Transition metal chalcogenides Dual-metal precursors Chemical vapor deposition Ordered cation vacancies
资助者	National Science Fund for Distinguished Young Scholars ; National Natural Science Foundation of China ; Guangdong Innovative and Entrepreneurial Research Team Program ; Bureau of Industry and Information Technology of Shenzhen ; Graphene Manufacturing Innova-tion Center Project? ; Shenzhen Basic Research Project ; Shenzhen Science and Technology Program ; Hong Kong Ultravision holdings Co., Limited
DOI	10.1016/j.scib.2022.06.022
收录类别	SCI
语种	英语
资助项目	National Science Fund for Distinguished Young Scholars[52125309] ; National Natural Science Foundation of China[51991343] ; National Natural Science Foundation of China[51920105002] ; National Natural Science Foundation of China[51991340] ; National Natural Science Foundation of China[52188101] ; National Natural Science Foundation of China[11974156] ; Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Guangdong Innovative and Entrepreneurial Research Team Program[2019ZT08C044] ; Bureau of Industry and Information Technology of Shenzhen[20200925161102001] ; Graphene Manufacturing Innova-tion Center Project?[201901171523] ; Shenzhen Basic Research Project[201901171523] ; Shenzhen Basic Research Project[JCYJ20200109144616617] ; Shenzhen Science and Technology Program[JCYJ20190809180605522] ; Shenzhen Science and Technology Program[KQTD20190929173815000] ; Hong Kong Ultravision holdings Co., Limited
WOS研究方向	Science & Technology - Other Topics
WOS类目	Multidisciplinary Sciences
WOS记录号	WOS:000862811100011
出版者	ELSEVIER
引用统计	被引频次：23[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/175684
专题	中国科学院金属研究所
通讯作者	Zhao, Yue; Lin, Junhao; Liu, Bilu; Cheng, Hui -Ming
作者单位	1.Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, Shenzhen Geim Graphene Ctr, Shenzhen 518055, Peoples R China 2.Tsinghua Univ, Inst Mat Res, Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China 3.Southern Univ Sci & Technol, Dept Phys, Shenzhen Key Lab Adv Quantum Funct Mat & Devices, Shenzhen 518055, Peoples R China 4.Foshan Univ, Sch Elect Informat Engn, Foshan 528000, Peoples R China 5.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 6.Chinese Acad Sci, Inst Technol Carbon Neutral, Shenzhen Inst Adv Technol, Fac Mat Sci & Engn, Shenzhen 518055, Peoples R China
推荐引用方式 GB/T 7714	Tan, Junyang,Zhang, Zongteng,Zeng, Shengfeng,et al. Dual-metal precursors for the universal growth of non-layered 2D transition metal chalcogenides with ordered cation vacancies[J]. SCIENCE BULLETIN,2022,67(16):1649-1658.
APA	Tan, Junyang.,Zhang, Zongteng.,Zeng, Shengfeng.,Li, Shengnan.,Wang, Jingwei.,...&Cheng, Hui -Ming.(2022).Dual-metal precursors for the universal growth of non-layered 2D transition metal chalcogenides with ordered cation vacancies.SCIENCE BULLETIN,67(16),1649-1658.
MLA	Tan, Junyang,et al."Dual-metal precursors for the universal growth of non-layered 2D transition metal chalcogenides with ordered cation vacancies".SCIENCE BULLETIN 67.16(2022):1649-1658.