Near-ultraviolet and near-infrared electroluminescence from an indium-tin-oxide film native Si oxide/p-Si structure

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	Near-ultraviolet and near-infrared electroluminescence from an indium-tin-oxide film native Si oxide/p-Si structure
	Y. Q. Wang; T. P. Zhao; J. Liu; G. G. Qin
	1999
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	74 期号:25 页码:3815-3817
摘要	We have deposited indium-tin-oxide (ITO) films on p-Si (100) substrates with native Si oxide layers on their surfaces using the electron beam depositing technique. After the ITO/native Si oxide/p-Si structure was annealed in a N-2 ambient, electroluminescence spectra with two peaks at near-ultraviolet (similar to 360 nm) and near-infrared (similar to 820 nm) have been measured under a forward bias of 6 V or larger. The experimental results have been interpreted tentatively using the tunneling-luminescence center process. It is considered that the two electroluminescence peaks originate from two groups of luminescence centers in the native Si oxide layers. The luminescence centers responsible for the near-ultraviolet peak have been discussed. (C) 1999 American Institute of Physics. [S0003-6951(99)05125-6].
部门归属	peking univ, dept phys, beijing 100871, peoples r china. peking univ, dept elect, beijing 100871, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;wang, yq (reprint author), peking univ, dept phys, beijing 100871, peoples r china
关键词	Oxidized Porous Silicon Light-emission
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WOS记录号	WOS:000080857600021
引用统计	被引频次：21[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/37526
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Y. Q. Wang,T. P. Zhao,J. Liu,et al. Near-ultraviolet and near-infrared electroluminescence from an indium-tin-oxide film native Si oxide/p-Si structure[J]. Applied Physics Letters,1999,74(25):3815-3817.
APA	Y. Q. Wang,T. P. Zhao,J. Liu,&G. G. Qin.(1999).Near-ultraviolet and near-infrared electroluminescence from an indium-tin-oxide film native Si oxide/p-Si structure.Applied Physics Letters,74(25),3815-3817.
MLA	Y. Q. Wang,et al."Near-ultraviolet and near-infrared electroluminescence from an indium-tin-oxide film native Si oxide/p-Si structure".Applied Physics Letters 74.25(1999):3815-3817.