Growth of GaN single crystals by Ca(3)N(2) flux

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	Growth of GaN single crystals by Ca(3)N(2) flux
	G. Wang; W. X. Yuan; J. K. Jian; H. Q. Bao; J. F. Wang; X. L. Chen; J. K. Liang
	2008
发表期刊	Scripta Materialia
ISSN	1359-6462
卷号	58 期号:4 页码:319-322
摘要	This paper reports recent progress on GaN single crystal growth by Ca(3)N(2) flux. The isothermal phase diagrams of the Ca-Ga-N system were predicted from the corresponding binary systems by CALPHAD. Well-crystallized GaN crystals up to 1.5 mm were grown from the Ca-Ga-N system at 900 degrees C under 0.2 MPa N(2) pressure. It was found that the crystal size depended on the molar ratio of starting materials, the temperature and the duration of growth. A growth mechanism involving two-step reactions is proposed. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
部门归属	[wang, g.; bao, h. q.; chen, x. l.; liang, j. k.] chinese acad sci, inst phys, beijing natl lab condensed matter phys, beijing 100080, peoples r china. [yuan, w. x.; wang, j. f.] univ sci & technol beijing, dept chem, sch appl sci, beijing 100083, peoples r china. [jian, j. k.] xinjiang univ, dept phys, urumqi 830046, peoples r china. [liang, j. k.] acad sinica, int ctr mat phys, shenyang 110016, peoples r china.;chen, xl (reprint author), chinese acad sci, inst phys, beijing natl lab condensed matter phys, pob 603, beijing 100080, peoples r china;chenx29@aphy.iphy.ac.cn
关键词	Calphad Single Crystal Growth Nitride Vapor-phase Epitaxy Iii-v Nitrides Bulk Gan Thermodynamic Assessment Na Flux Pressure Gallium System Mechanism Devices
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/33125
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	G. Wang,W. X. Yuan,J. K. Jian,et al. Growth of GaN single crystals by Ca(3)N(2) flux[J]. Scripta Materialia,2008,58(4):319-322.
APA	G. Wang.,W. X. Yuan.,J. K. Jian.,H. Q. Bao.,J. F. Wang.,...&J. K. Liang.(2008).Growth of GaN single crystals by Ca(3)N(2) flux.Scripta Materialia,58(4),319-322.
MLA	G. Wang,et al."Growth of GaN single crystals by Ca(3)N(2) flux".Scripta Materialia 58.4(2008):319-322.