Tetramethysilane-assisted enhancement of diamond nucleation on silicon substrate

doi:10.1016/j.surfcoat.2018.06.087

IMR OpenIR

	Tetramethysilane-assisted enhancement of diamond nucleation on silicon substrate
	Yi, Yong 1; Xiong, Ying 1,2; Zhuang, Hao 2; Yang, Bing 3; Wang, Bing 1; Jiang, Xin 2,3
通讯作者	Xiong, Ying(xiongying@swust.edu.cn) ; Jiang, Xin()
	2018-09-15
发表期刊	SURFACE & COATINGS TECHNOLOGY
ISSN	0257-8972
卷号	349 页码:959-962
摘要	This paper describes the effect of tetramethylsilane (TMS) on diamond nucleation on Si substrate under an applied bias voltage of 120 V, performed in a modified microwave plasma chemical vapor deposition (MPCVD) reactor. The introduction of TMS in the CH4/H-2 plasma leads to a significant enhancement of nucleation density of diamond nuclei, namely from (3.7 +/- 0.2) x 10(7)/cm(2) without the introduction of TMS to (4.7 +/- 0.5) x 10(10)/cm(2) at the TMS flow rate of 4 sccm. On the contrary, further increasing in the TMS flow rate to 8 sccm slightly reduces the nucleation density of diamond nuclei to (2.1 +/- 0.3) x 10(10)/cm(2), along with the increase in average size of diamond nuclei. High-resolution transmission electron microscopy (HRTEM) and Xray photoelectron spectroscopy (XPS) allow us to study the microstructural and chemical composition evolution of Si/diamond interface. The obtained results suggest that bias-enhanced nucleation of diamond on Si substrate exhibits a direct relationship with the TMS flow rate.
关键词	Bias-enhanced nucleation Tetramethylsilane Diamond nuclei Nucleation behavior HRTEM
资助者	National Natural Science Foundation of China ; German Research Foundation (DGF)
DOI	10.1016/j.surfcoat.2018.06.087
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[51522229] ; National Natural Science Foundation of China[1120512] ; German Research Foundation (DGF)[JI 22/24-1]
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Coatings & Films ; Physics, Applied
WOS记录号	WOS:000441492600100
出版者	ELSEVIER SCIENCE SA
引用统计	被引频次：4[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/129099
专题	中国科学院金属研究所
通讯作者	Xiong, Ying; Jiang, Xin
作者单位	1.Southwest Univ Sci & Technol, State Key Lab Environm Friendly Energy Mat, Mianyang 621010, Peoples R China 2.Univ Siegen, Inst Mat Engn, Paul Bonatz Str 9-11, D-57076 Siegen, Germany 3.Chinese Acad Sci, IMR, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China
推荐引用方式 GB/T 7714	Yi, Yong,Xiong, Ying,Zhuang, Hao,et al. Tetramethysilane-assisted enhancement of diamond nucleation on silicon substrate[J]. SURFACE & COATINGS TECHNOLOGY,2018,349:959-962.
APA	Yi, Yong,Xiong, Ying,Zhuang, Hao,Yang, Bing,Wang, Bing,&Jiang, Xin.(2018).Tetramethysilane-assisted enhancement of diamond nucleation on silicon substrate.SURFACE & COATINGS TECHNOLOGY,349,959-962.
MLA	Yi, Yong,et al."Tetramethysilane-assisted enhancement of diamond nucleation on silicon substrate".SURFACE & COATINGS TECHNOLOGY 349(2018):959-962.