The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure

doi:10.1007/s00339-011-6446-5

IMR OpenIR

	The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure
	Bi, Yang 1; Wang, XiaoLiang 1,2; Yang, CuiBai 1,2; Xiao, HongLing 1,2; Wang, CuiMei 1,2; Peng, EnChao 1; Lin, DeFeng 1; Feng, Chun 1,2; Jiang, LiJuan 1,2
通讯作者	Bi, Yang(ybi@semi.ac.cn)
	2011-09-01
发表期刊	APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN	0947-8396
卷号	104 期号:4 页码:1211-1216
摘要	This is a theoretical study of the 1st AlN interlayer and the 2nd GaN layer on properties of the Al(0.3)Ga(0.7)N/2nd AlN/2nd GaN/1st AlN/1st GaN HEMT structure by self-consistently solving coupled Schrodinger and Poisson equations. Our calculation shows that by increasing the 1st AlN thickness from 1.0 nm to 3.0 nm, the 2DEG, which is originally confined totally in the 2nd channel, gradually decreases, begins to turn up and eventually concentrates in the 1st one. The total 2DEG (2DEG in both channels) sheet density increases nearly linearly with the increasing 1st AlN thickness. And the slope of the potential profile of the AlGaN changes with the 1st AlN thickness, causing the unusual dependence of the total 2DEG sheet density on the thickness of the AlGaN barrier. The variations of 2DEG distribution, the total 2DEG sheet density and the conduction band profiles as a function of the 2nd GaN thickness also have been discussed. Their physical mechanisms have been investigated on the basis of the surface state theory. And the confinement of 2DEG can be further enhanced by the double-AlN interlayer, compared with the InGaN back-barrier.
资助者	Knowledge Innovation Engineering of Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China ; Chinese Academy of Sciences
DOI	10.1007/s00339-011-6446-5
收录类别	SCI
语种	英语
资助项目	Knowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02]
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000293972100030
出版者	SPRINGER
引用统计	被引频次：4[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/104279
专题	中国科学院金属研究所
通讯作者	Bi, Yang
作者单位	1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Bi, Yang,Wang, XiaoLiang,Yang, CuiBai,et al. The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2011,104(4):1211-1216.
APA	Bi, Yang.,Wang, XiaoLiang.,Yang, CuiBai.,Xiao, HongLing.,Wang, CuiMei.,...&Jiang, LiJuan.(2011).The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,104(4),1211-1216.
MLA	Bi, Yang,et al."The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 104.4(2011):1211-1216.