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The critical role of Si doping in enhancing the stability of M6C carbides 期刊论文
ELSEVIER SCIENCE SA, 2017, 卷号: 728, 页码: 917-926
作者:  Jiang, Li;  Ye, Xiang-Xi;  Wang, Zhi-Qiang;  Yu, Cun;  Dong, Jia-Sheng;  Xie, RuoBing;  Li, Zhi-Jun;  Yan, Long;  Sham, Tsun-Kong;  Zhou, Xing-Tai;  Li, Ai-Ming;  Li, ZJ;  Yan, L (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Thorium Molten Salts Reactor Ctr, Shanghai 201800, Peoples R China.
收藏  |  浏览/下载：135/0  |  提交时间：2018/01/10
Si Doping  M6c Carbides  Stability  Si K-edge Xanes  First-principles Calculations  
Theoretical prediction of electronic structures and optical properties of Y-doped gamma-Si3N4 期刊论文
Physica B-Condensed Matter, 2008, 卷号: 403, 期号: 13-16, 页码: 2515-2520
作者:  M. Xu;  Y. C. Ding;  G. Xiong;  W. J. Zhu;  H. L. He
Adobe PDF(464Kb)  |  收藏  |  浏览/下载：118/0  |  提交时间：2012/04/13
Electronic Structures  Optical Property  Doping  Gamma-si3n4  Silicon-nitride  Phase  
Photoluminescence study of Ge nanocrystals irradiated by reactor neutron flux 期刊论文
Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 2007, 2007, 卷号: 264, 264, 期号: 2, 页码: 272-276, 272-276
作者:  S. B. Dun;  T. C. Lu;  Q. Hu;  Y. W. Hu;  C. F. You;  S. B. Zhang;  B. Tang;  J. L. Dai;  N. K. Huang
收藏  |  浏览/下载：147/0  |  提交时间：2012/04/13
Ge Nanocrystals  Ge Nanocrystals  Neutron Transmutation Doping  Neutron Transmutation Doping  Photoluminescence  Photoluminescence  Raman  Raman  Scattering  Scattering  Doped Si Nanocrystals  Doped Si Nanocrystals  Electron-spin-resonance  Electron-spin-resonance  Semiconductor  Semiconductor  Nanocrystals  Nanocrystals  N-type  N-type  Implanted Sio2-films  Implanted Sio2-films  Silicon Nanocrystals  Silicon Nanocrystals  Porous  Porous  Silicon  Silicon  Raman  Raman  Luminescence  Luminescence  Temperature  Temperature  
Enhancing electroluminescence from Au/nanoscale Si-rich SiO2 film/p-Si by doping Al into the SiO2 film and gamma-ray irradiation 期刊论文
Journal of Luminescence, 2001, 卷号: 93, 期号: 1, 页码: 75-80
作者:  G. Z. Ran;  S. T. Wang;  J. S. Fu;  Z. C. Ma;  W. H. Zong;  G. G. Qin
收藏  |  浏览/下载：61/0  |  提交时间：2012/04/14
Electroluminescence  Luminescence Center  Nanocrystalline  Irradiation  Doping  Porous Silicon  Visible Electroluminescence  P-si  Stability  
Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 220, 期号: 4, 页码: 461-465
作者:  Gao, F;  Huang, DD;  Li, JP;  Lin, YX;  Kong, MY;  Sun, DZ;  Li, JM;  Lin, LY
收藏  |  浏览/下载：76/0  |  提交时间：2021/02/02
Si growth rate  P doping  PH3 flow rate  P segregation  GSMBE  
Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 220, 期号: 4, 页码: 461-465
作者:  Gao, F;  Huang, DD;  Li, JP;  Lin, YX;  Kong, MY;  Sun, DZ;  Li, JM;  Lin, LY
收藏  |  浏览/下载：70/0  |  提交时间：2021/02/02
Si growth rate  P doping  PH3 flow rate  P segregation  GSMBE  
Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 208, 期号: 1-4, 页码: 322-326
作者:  Liu, JP;  Huang, DD;  Li, JP;  Lin, YX;  Sun, DZ;  Kong, MY
收藏  |  浏览/下载：107/0  |  提交时间：2021/02/02
n-type doping  p-type doping  Si/SiGe  HBT  GSMBE  
High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 200, 期号: 3-4, 页码: 613-616
作者:  Liu, JP;  Huang, DD;  Li, JP;  Sun, DZ;  Kong, MY
收藏  |  浏览/下载：103/0  |  提交时间：2021/02/02
Si low-temperature epitaxy  P doping  surface morphology  morphological evolution  
High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 200, 期号: 3-4, 页码: 613-616
作者:  Liu, JP;  Huang, DD;  Li, JP;  Sun, DZ;  Kong, MY
收藏  |  浏览/下载：65/0  |  提交时间：2021/02/02
Si low-temperature epitaxy  P doping  surface morphology  morphological evolution  
High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 200, 期号: 3-4, 页码: 613-616
作者:  Liu, JP;  Huang, DD;  Li, JP;  Sun, DZ;  Kong, MY
收藏  |  浏览/下载：58/0  |  提交时间：2021/02/02
Si low-temperature epitaxy  P doping  surface morphology  morphological evolution