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In situ doping control for growth of n-p-n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 273, 期号: 3-4, 页码: 381-385
作者:  Gao, F;  Huang, DD;  Li, JP;  Liu, C
收藏  |  浏览/下载：101/0  |  提交时间：2021/02/02
doping  molecular beam epitaxy  germanium silicon alloys  semiconducting germanium  semiconducting silicon  bipolar transistors  
Increasing the photoluminescence intensity of Ge islands by chemical etching 期刊论文
CHINESE PHYSICS, 2001, 卷号: 10, 期号: 10, 页码: 966-969
作者:  Gao, F;  Huang, CJ;  Huang, DD;  Li, JP;  Kong, MY;  Zeng, YP;  Li, JM;  Lin, LY
收藏  |  浏览/下载：105/0  |  提交时间：2021/02/02
Ge islands  chemical etching  photoluminescence  Si2H6-Ge molecular beam epitaxy  
Increasing the photoluminescence intensity of Ge islands by chemical etching 期刊论文
CHINESE PHYSICS, 2001, 卷号: 10, 期号: 10, 页码: 966-969
作者:  Gao, F;  Huang, CJ;  Huang, DD;  Li, JP;  Kong, MY;  Zeng, YP;  Li, JM;  Lin, LY
收藏  |  浏览/下载：91/0  |  提交时间：2021/02/02
Ge islands  chemical etching  photoluminescence  Si2H6-Ge molecular beam epitaxy  
Changing the size and shape of Ge island by chemical etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 231, 期号: 1-2, 页码: 17-21
作者:  Gao, F;  Huang, CJ;  Huang, DD;  Li, JP;  Sun, DZ;  Kong, MY;  Zeng, YP;  Li, JM;  Lin, LY
收藏  |  浏览/下载：98/0  |  提交时间：2021/02/02
atomic force microscopy  etching  nanostructures  molecular beam epitaxy  semiconducting germanium  semiconducting silicon  
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 页码: 766-769
作者:  Gao, F;  Lin, YX;  Huang, DD;  Li, JP;  Sun, DZ;  Kong, MY;  Zeng, YP;  Li, JM;  Lin, LY
收藏  |  浏览/下载：77/0  |  提交时间：2021/02/02
annealing  molecular beam epitaxy  germanium silicon alloys  semiconducting materials  
Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 223, 期号: 4, 页码: 489-493
作者:  Gao, F;  Huang, DD;  Li, JP;  Kong, MY;  Sun, DZ;  Li, JM;  Zeng, YP;  Lin, LY
收藏  |  浏览/下载：92/0  |  提交时间：2021/02/02
molecular beam epitaxy  semiconducting gegermanium  semiconducting silicon  bipolar transistors  heterojunction semiconductor devices  
Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 220, 期号: 4, 页码: 461-465
作者:  Gao, F;  Huang, DD;  Li, JP;  Lin, YX;  Kong, MY;  Sun, DZ;  Li, JM;  Lin, LY
收藏  |  浏览/下载：76/0  |  提交时间：2021/02/02
Si growth rate  P doping  PH3 flow rate  P segregation  GSMBE  
The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 220, 期号: 4, 页码: 457-460
作者:  Gao, F;  Huang, DD;  Li, JP;  Lin, YX;  Kong, MY;  Li, JM;  Zeng, YP;  Lin, LY
收藏  |  浏览/下载：91/0  |  提交时间：2021/02/02
GSMBE  SiGe alloy  doping  SIMS  HBT  current gain  
Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 220, 期号: 4, 页码: 461-465
作者:  Gao, F;  Huang, DD;  Li, JP;  Lin, YX;  Kong, MY;  Sun, DZ;  Li, JM;  Lin, LY
收藏  |  浏览/下载：71/0  |  提交时间：2021/02/02
Si growth rate  P doping  PH3 flow rate  P segregation  GSMBE  
The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 220, 期号: 4, 页码: 457-460
作者:  Gao, F;  Huang, DD;  Li, JP;  Lin, YX;  Kong, MY;  Li, JM;  Zeng, YP;  Lin, LY
收藏  |  浏览/下载：94/0  |  提交时间：2021/02/02
GSMBE  SiGe alloy  doping  SIMS  HBT  current gain