Amplification of magnetoresistance and Hall effect of Fe3O4-SiO2-Si structure

doi:10.1063/1.3065987

IMR OpenIR

	Amplification of magnetoresistance and Hall effect of Fe3O4-SiO2-Si structure
	Wang, Xianjie 1,2; Sui, Yu 1,3; Tang, Jinke 2; Li, Yao 4; Zhang, Xingquan 1; Wang, Cong 1; Liu, Zhiguo 1; Su, Wenhui 1,3
通讯作者	Sui, Yu(suiyu@hit.edu.cn)
	2009-04-01
发表期刊	JOURNAL OF APPLIED PHYSICS
ISSN	0021-8979
卷号	105 期号:7 页码:3
摘要	In this paper, we report the magnetoresistance and the Hall effect in the Fe3O4-SiO2-Si structure. Single phase magnetite films were deposited on n-type silicon substrates using laser molecular beam epitaxy. When the temperature is increased beyond 230 K, the resistance drops rapidly because the conduction path starts to switch from the Fe3O4 film to the inversion layer underneath the native SiO2 via thermally assisted tunneling. A large negative magnetoresistance is observed at about 230 K, and this maximum shifts to higher temperature with increasing film thickness. Hall effect data of the structure show that the carriers are holes above the channel switching temperature. Our results confirm that the large magnetoresistance at similar to 230 K originates from the amplification of the magnetoresistance of the magnetite in the Fe3O4-SiO2-Si structure. (c) 2009 American Institute of Physics. [DOI: 10.1063/1.3065987]
DOI	10.1063/1.3065987
收录类别	SCI
语种	英语
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000266633500272
出版者	AMER INST PHYSICS
引用统计	被引频次：8[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/95745
专题	中国科学院金属研究所
通讯作者	Sui, Yu
作者单位	1.Harbin Inst Technol, CCMST, Dept Phys, Harbin 150001, Peoples R China 2.Univ Wyoming, Dept Phys & Astron, Laramie, WY 82071 USA 3.Acad Sinica, Int Ctr Mat Phys, Shenyang 110015, Peoples R China 4.Harbin Inst Technol, Ctr Composite Mat, Harbin 150001, Peoples R China
推荐引用方式 GB/T 7714	Wang, Xianjie,Sui, Yu,Tang, Jinke,et al. Amplification of magnetoresistance and Hall effect of Fe3O4-SiO2-Si structure[J]. JOURNAL OF APPLIED PHYSICS,2009,105(7):3.
APA	Wang, Xianjie.,Sui, Yu.,Tang, Jinke.,Li, Yao.,Zhang, Xingquan.,...&Su, Wenhui.(2009).Amplification of magnetoresistance and Hall effect of Fe3O4-SiO2-Si structure.JOURNAL OF APPLIED PHYSICS,105(7),3.
MLA	Wang, Xianjie,et al."Amplification of magnetoresistance and Hall effect of Fe3O4-SiO2-Si structure".JOURNAL OF APPLIED PHYSICS 105.7(2009):3.