Synthesis and characterization of boron doped diamond/beta-SiC composite films

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	Synthesis and characterization of boron doped diamond/beta-SiC composite films
	Fu, Haiyuan; Zhuang, Hao; Yang, Liang; Hantschel, Thomas; Ma, Song; Zhang, Zhidong; Jiang, Xin; Jiang, X (reprint author), Univ Siegen, Inst Mat Engn, Paul Bonatz Str 9-11, D-57076 Siegen, Germany.
	2017-01-16
发表期刊	APPLIED PHYSICS LETTERS
ISSN	0003-6951
卷号	110 期号:3 页码:-
摘要	Boron doped diamond/beta-SiC composite films with a conductive diamond phase separated by the insulating beta-SiC phase are fabricated by the microwave plasma chemical vapor deposition process. By manipulating the gas phase composition during the film deposition, the boron incorporation and diamond/beta-SiC ratio in the composite film are well controlled. Scanning electron microscopy, transmission electron microscopy, Raman and X-ray diffraction measurements are carried out to study the structural composition of the films. It is observed that the introduction of boron during the growth process does not affect the independent growth of diamond and beta-SiC crystals with high crystal quality. Scanning spreading resistance microscopy measurements confirm the presence of the conductive diamond phase and the insulating beta-SiC phase in the film. The observed differences in the conductivities between diamond and beta-SiC are explained by the different boron acceptor levels in diamond and beta-SiC crystals. Cyclic voltammetry measurements are carried out to study the electrochemical property of the films. Our results demonstrate that boron doped diamond/ beta-SiC composite films are a good candidate for electroanalysis applications whereby exploiting diamond's high chemical and dimensional stability as well as its excellent electrochemical properties. Published by AIP Publishing.; Boron doped diamond/beta-SiC composite films with a conductive diamond phase separated by the insulating beta-SiC phase are fabricated by the microwave plasma chemical vapor deposition process. By manipulating the gas phase composition during the film deposition, the boron incorporation and diamond/beta-SiC ratio in the composite film are well controlled. Scanning electron microscopy, transmission electron microscopy, Raman and X-ray diffraction measurements are carried out to study the structural composition of the films. It is observed that the introduction of boron during the growth process does not affect the independent growth of diamond and beta-SiC crystals with high crystal quality. Scanning spreading resistance microscopy measurements confirm the presence of the conductive diamond phase and the insulating beta-SiC phase in the film. The observed differences in the conductivities between diamond and beta-SiC are explained by the different boron acceptor levels in diamond and beta-SiC crystals. Cyclic voltammetry measurements are carried out to study the electrochemical property of the films. Our results demonstrate that boron doped diamond/ beta-SiC composite films are a good candidate for electroanalysis applications whereby exploiting diamond's high chemical and dimensional stability as well as its excellent electrochemical properties. Published by AIP Publishing.
部门归属	[fu, haiyuan ; zhuang, hao ; jiang, xin] univ siegen, inst mat engn, paul bonatz str 9-11, d-57076 siegen, germany ; [yang, liang ; ma, song ; zhang, zhidong] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china ; [hantschel, thomas] imec, kapeldreef 75, b-3001 leuven, belgium
学科领域	Physics, Applied
资助者	Deutsche Forschungsgemeinschaft (DFG) [JI 22/24-1]; National Natural Science Foundation of China [51271178, 51571195, 51590883]
收录类别	SCI
语种	英语
WOS记录号	WOS:000392836900011
引用统计	被引频次：8[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/78337
专题	中国科学院金属研究所
通讯作者	Jiang, X (reprint author), Univ Siegen, Inst Mat Engn, Paul Bonatz Str 9-11, D-57076 Siegen, Germany.
推荐引用方式 GB/T 7714	Fu, Haiyuan,Zhuang, Hao,Yang, Liang,et al. Synthesis and characterization of boron doped diamond/beta-SiC composite films[J]. APPLIED PHYSICS LETTERS,2017,110(3):-.
APA	Fu, Haiyuan.,Zhuang, Hao.,Yang, Liang.,Hantschel, Thomas.,Ma, Song.,...&Jiang, X .(2017).Synthesis and characterization of boron doped diamond/beta-SiC composite films.APPLIED PHYSICS LETTERS,110(3),-.
MLA	Fu, Haiyuan,et al."Synthesis and characterization of boron doped diamond/beta-SiC composite films".APPLIED PHYSICS LETTERS 110.3(2017):-.