Enrichment of Semiconducting Single-Walled Carbon Nanotubes by Carbothermic Reaction for Use in All-Nanotube Field Effect Transistors

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	Enrichment of Semiconducting Single-Walled Carbon Nanotubes by Carbothermic Reaction for Use in All-Nanotube Field Effect Transistors
	S. S. Li; C. Liu; P. X. Hou; D. M. Sun; H. M. Cheng
	2012
发表期刊	Acs Nano
ISSN	1936-0851
卷号	6 期号:11 页码:9657-9661
摘要	Selective removal of metallic single-walled carbon nanotubes (SWCNTs) and consequent enrichment of semiconducting SWCNTs were achieved through an efficient carbothermic reaction with a NiO thin film at a relatively low temperature of 350 degrees C. All-SWCNT field effect transistors (FETs) were fabricated with the aid of a patterned NiO mask, in which the as-grown SWCNTs behaving as source/drain electrodes and the remaining semiconducting SWCNTs that survive in the carbothermic reaction as a channel material. The all-SWCNT FETs demonstrate improved current ON/OFF ratios of similar to 10(3).
部门归属	[li, shisheng; liu, chang; hou, peng-xiang; sun, dong-ming; cheng, hui-ming] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china.;liu, c (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, 72 wenhua rd, shenyang 110016, peoples r china.;cliu@imr.ac.cn
关键词	Single-walled Carbon Nanotubes Carbothermic Reaction Field Effect Transistors Preferential Growth Circuits
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/60068
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	S. S. Li,C. Liu,P. X. Hou,et al. Enrichment of Semiconducting Single-Walled Carbon Nanotubes by Carbothermic Reaction for Use in All-Nanotube Field Effect Transistors[J]. Acs Nano,2012,6(11):9657-9661.
APA	S. S. Li,C. Liu,P. X. Hou,D. M. Sun,&H. M. Cheng.(2012).Enrichment of Semiconducting Single-Walled Carbon Nanotubes by Carbothermic Reaction for Use in All-Nanotube Field Effect Transistors.Acs Nano,6(11),9657-9661.
MLA	S. S. Li,et al."Enrichment of Semiconducting Single-Walled Carbon Nanotubes by Carbothermic Reaction for Use in All-Nanotube Field Effect Transistors".Acs Nano 6.11(2012):9657-9661.