Electroluminescence from amorphous Si/SiO2 superlattices

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	Electroluminescence from amorphous Si/SiO2 superlattices
	G. G. Qin; S. Y. Ma; Z. C. Ma; W. H. Zong; L. P. You
	1998
发表期刊	Solid State Communications
ISSN	0038-1098
卷号	106 期号:6 页码:329-333
摘要	Amorphous Si/SiO2 superlattices, with four periods, have been grown using the two-target alternation magnetron sputtering technique. The thicknesses of SiO2 layers in ail the superlattices are 1.5 nm and those of Si layers in six types of the superlattices are 1.0, 1.4, 1.8, 2.2, 2.6 and 3.0 nm. Visible electroluminescence (EL) has been observed from the semitransparent Au film/(amorphous Si/SiO2 superlattice)lp type Si structures at a forward bias of 4V or larger. A broad band with two peaks (or shoulders) around 630-650 nm and 510 nm appear in the EL spectra of the structures. The effects of thicknesses of Si layers in the amorphous Si/SiO2 superlattices and of input electrical power on the EL spectra are studied systematically. (C) 1998 Elsevier Science Ltd. All rights reserved.
部门归属	peking univ, dept phys, beijing 100871, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china. 13th inst minist elect ind, natl lab gaas ic, shijiazhuang, peoples r china. peking univ, electron microscopy lab, beijing 100871, peoples r china.;qin, gg (reprint author), peking univ, dept phys, beijing 100871, peoples r china
关键词	Au Porous-si Oxide P-si Quantum
URL	查看原文
WOS记录号	WOS:000073921100003
引用统计	被引频次：33[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/37752
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	G. G. Qin,S. Y. Ma,Z. C. Ma,et al. Electroluminescence from amorphous Si/SiO2 superlattices[J]. Solid State Communications,1998,106(6):329-333.
APA	G. G. Qin,S. Y. Ma,Z. C. Ma,W. H. Zong,&L. P. You.(1998).Electroluminescence from amorphous Si/SiO2 superlattices.Solid State Communications,106(6),329-333.
MLA	G. G. Qin,et al."Electroluminescence from amorphous Si/SiO2 superlattices".Solid State Communications 106.6(1998):329-333.