Microstructure of si cones prepared by Ar+-sputtering Si/Mo target | |
X. L. Ma; N. G. Shang; C. S. Lee; S. T. Lee | |
2002 | |
发表期刊 | Journal of Materials Science & Technology
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ISSN | 1005-0302 |
卷号 | 18期号:2页码:173-175 |
摘要 | By Ar+ sputtering onto Si wafers which were surrounded by Mo plates, uniform cones over a large area on the Si surface were formed. Scanning electron microscopic study showed that the cones were formed on the entire surface of the Si wafer. The dimensions of the uniform cones were one micrometer in diameter and 5similar to6 micrometer's high. They were further characterized by means of cross-sectional transmission electron microscopy, with the technique of micro-diffractions. It was found that the cone contained a pure Si regime and a Mo-rich regime. In the binary Mo-Si zone, we identified three distinct areas vertically: (1) domains of Mo-induced Si ordered structures, (2) a small volume of a new Mo3Si2 structural variant, intergrown with the Si ordered structure, and (3) a small amount of pure Mo nanoparticles covering the surface of the cones. The formation of the large and uniform cones may provide a new surface configuration for potential applications in surface science and technology. |
部门归属 | chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. city univ hong kong, ctr super diamond & adv films, hong kong, hong kong, peoples r china. city univ hong kong, dept phys & mat sci, hong kong, hong kong, peoples r china.;ma, xl (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china |
关键词 | Si Cones Ordered Structure Mo Silicide Copper Seed Cones Resolution Electron-microscopy Surface Growth |
URL | 查看原文 |
WOS记录号 | WOS:000174881400022 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/36373 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | X. L. Ma,N. G. Shang,C. S. Lee,et al. Microstructure of si cones prepared by Ar+-sputtering Si/Mo target[J]. Journal of Materials Science & Technology,2002,18(2):173-175. |
APA | X. L. Ma,N. G. Shang,C. S. Lee,&S. T. Lee.(2002).Microstructure of si cones prepared by Ar+-sputtering Si/Mo target.Journal of Materials Science & Technology,18(2),173-175. |
MLA | X. L. Ma,et al."Microstructure of si cones prepared by Ar+-sputtering Si/Mo target".Journal of Materials Science & Technology 18.2(2002):173-175. |
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