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Effect of magnetic metal cluster doping on dielectric property of LaAlO3 thin films prepared by pulsed laser deposition
H. Jiang; X. Y. Qiu; G. L. Yuan; H. Zhu; J. M. Liu
2004
发表期刊Materials Science in Semiconductor Processing
ISSN1369-8001
卷号7期号:4-6页码:237-241
摘要The thin films of Ni-doped dielectric LaAlO3 (LAO) by a co-ablation of magnetic metal Ni and dielectric LAO on silicon-based substrates have been prepared by pulsed laser deposition. A significant enhancement of dielectric constant of LAO upon a Ni doping is observed. Furthermore, the dielectric modulation by applying a magnetic field to the samples is verified, obviously due to the ferromagnetism of Ni metal clusters embedded in the LAO thin films. A series of microstructural and dielectric characterizations on the as-prepared thin films has been performed and the mechanism underlying the dielectric enhancement upon the Ni doping is discussed. (C) 2004 Elsevier Ltd. All rights reserved.
部门归属nanjing univ, solid state microstruct lab, nanjing 210093, peoples r china. chinese acad sci, int ctr mat phys, shenyang, peoples r china.;liu, jm (reprint author), nanjing univ, solid state microstruct lab, nanjing 210093, peoples r china;liujm@nju.edu.cn
关键词Dielectric Capacitance Magnetism Nanoparticle Percolation-threshold Critical-behavior Gate Dielectrics Constant Composites Conductivity Transition
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WOS记录号WOS:000225855200014
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被引频次:3[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/35387
专题中国科学院金属研究所
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H. Jiang,X. Y. Qiu,G. L. Yuan,et al. Effect of magnetic metal cluster doping on dielectric property of LaAlO3 thin films prepared by pulsed laser deposition[J]. Materials Science in Semiconductor Processing,2004,7(4-6):237-241.
APA H. Jiang,X. Y. Qiu,G. L. Yuan,H. Zhu,&J. M. Liu.(2004).Effect of magnetic metal cluster doping on dielectric property of LaAlO3 thin films prepared by pulsed laser deposition.Materials Science in Semiconductor Processing,7(4-6),237-241.
MLA H. Jiang,et al."Effect of magnetic metal cluster doping on dielectric property of LaAlO3 thin films prepared by pulsed laser deposition".Materials Science in Semiconductor Processing 7.4-6(2004):237-241.
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