Helium-charged La-Ni-Al thin films deposited by magnetron sputtering | |
L. Q. Shi; D. M. Chen; S. L. Xu; C. Z. Liu; W. L. Hao; Z. Y. Zhou | |
2005 | |
发表期刊 | Fusion Science and Technology
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ISSN | 1536-1055 |
卷号 | 48期号:1页码:534-538 |
摘要 | An advanced implantation of low energy helium-4 atoms during the La-Ni-Al film growth by adopting magnetron sputtering with Ar/He mixture gases is discussed Both proton backscattering spectroscopy (PBS) and elastic recoil detection (ERD) analyses were adopted to measure helium concentration of the films and distribution in the near-surface region. Helium atoms with a high concentration incorporate evenly in deposited film. The introduction of the helium with no extra irradiation damage is expected by choosing suitable deposition conditions. It was found that amorphous and crystalline LaNi5 -type structures can be achieved when sputtered with pure Ar and Ar/He mixture gases at room temperature, respectively. Thermal desorption experiments proposes that a part of hydrogen atoms are bound to trapped helium at crystal and releases together with helium. Only a small fraction of helium is released from the helium-vacancy clusters in lower temperature range and most of helium is released from small size helium bubbles in the high temperature range. |
部门归属 | fudan univ, appl ion beam phys lab, shanghai 200433, peoples r china. chinese acad sci, inst met res, shenyang 110016, peoples r china. china acad engn phys, inst nulear & chem, chengdu 610003, peoples r china.;shi, lq (reprint author), fudan univ, appl ion beam phys lab, shanghai 200433, peoples r china;lqshi@fudan.edu.cn |
关键词 | Lani4.25al0.75 Behavior Tritides |
URL | 查看原文 |
WOS记录号 | WOS:000230433300116 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/35029 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | L. Q. Shi,D. M. Chen,S. L. Xu,et al. Helium-charged La-Ni-Al thin films deposited by magnetron sputtering[J]. Fusion Science and Technology,2005,48(1):534-538. |
APA | L. Q. Shi,D. M. Chen,S. L. Xu,C. Z. Liu,W. L. Hao,&Z. Y. Zhou.(2005).Helium-charged La-Ni-Al thin films deposited by magnetron sputtering.Fusion Science and Technology,48(1),534-538. |
MLA | L. Q. Shi,et al."Helium-charged La-Ni-Al thin films deposited by magnetron sputtering".Fusion Science and Technology 48.1(2005):534-538. |
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