1.54 mu m Er3+ electroluminescence from an erbium-compound-doped organic light emitting diode with a p-type silicon anode

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	1.54 mu m Er3+ electroluminescence from an erbium-compound-doped organic light emitting diode with a p-type silicon anode
	W. Q. Zhao; P. F. Wang; G. Z. Ran; G. L. Ma; B. R. Zhang; W. M. Liu; S. K. Wu; L. Dai; G. G. Qin
	2006
发表期刊	Journal of Physics D-Applied Physics
ISSN	0022-3727
卷号	39 期号:13 页码:2711-2714
摘要	By doping an erbium complex, erbium (III) 2,4-pentanedionate (Er(acac)(3)), into the ALQ layer, we fabricate a series of infrared emission organic light emitting diodes (OLED) with structures of p-Si/SiO2/NPB/ALQ/ALQ:Er(acac)(3)/ALQ/Sm/Au, where p-Si is the anode and Sm/Au is the cathode. The 1.54 mu m emission from Er3+ is observed. The impact of doping level of Er(acac)(3) in ALQ on 1.54 mu m electroluminescence (EL) intensity is studied, and the best mass ratio of Er(acac)(3) to ALQ is found at 1:60. A competitive EL mechanism from the ALQ and Er(acac)(3) is found and the Er3+ ions excitations are attributed to energy transfer from the ligands to Er ions.
部门归属	peking univ, sch phys, beijing 100871, peoples r china. peking univ, state key lab mesoscop phys, beijing 100871, peoples r china. chinese acad sci, tech inst phys & chem, beijing 100101, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;qin, gg (reprint author), peking univ, sch phys, beijing 100871, peoples r china;qingg@pku.edu.cn
关键词	Molecular-beam Epitaxy Photoluminescence Oxide
URL	查看原文
WOS记录号	WOS:000238674100015
引用统计	被引频次：9[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/34743
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	W. Q. Zhao,P. F. Wang,G. Z. Ran,et al. 1.54 mu m Er3+ electroluminescence from an erbium-compound-doped organic light emitting diode with a p-type silicon anode[J]. Journal of Physics D-Applied Physics,2006,39(13):2711-2714.
APA	W. Q. Zhao.,P. F. Wang.,G. Z. Ran.,G. L. Ma.,B. R. Zhang.,...&G. G. Qin.(2006).1.54 mu m Er3+ electroluminescence from an erbium-compound-doped organic light emitting diode with a p-type silicon anode.Journal of Physics D-Applied Physics,39(13),2711-2714.
MLA	W. Q. Zhao,et al."1.54 mu m Er3+ electroluminescence from an erbium-compound-doped organic light emitting diode with a p-type silicon anode".Journal of Physics D-Applied Physics 39.13(2006):2711-2714.