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Fatigue and thermal fatigue damage analysis of thin metal films
G. P. Zhang; C. A. Volkert; R. Schwaiger; R. Monig; O. Kraft
2007
发表期刊Microelectronics Reliability
ISSN0026-2714
卷号47期号:12页码:2007-2013
摘要In this paper, we summarize several testing methods that are currently available for the characterization of fatigue properties of thin metal films. Using these testing methods, a number of experimental investigations of the fatigue and thermal fatigue of metal films with thicknesses ranging from micrometers to sub-micrometers are described. Extensive experimental observations as well as theoretical analyses reveal that the damage behavior, i.e. typical fatigue extrusions and cracking, are quite different from that of bulk materials, and are controlled by the length scales of the materials. Due to the high surface to volume ratio of thin films interface-induced and diffusion-related damage are prevalent in these small length scale materials. As a result, interfaces pose a serious threat to the reliability of thin films. (c) 2007 Elsevier Ltd. All rights reserved.
部门归属chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. forschungszentrum karlsruhe, inst mat forschung 2, d-76021 karlsruhe, germany.;zhang, gp (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, 72 wenhua rd, shenyang 110016, peoples r china;gpzhang@imr.ac.en
关键词High-cycle Fatigue Copper-films Mechanical-properties Behavior Size Deformation Specimens Tension
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WOS记录号WOS:000251484000020
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被引频次:59[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/34021
专题中国科学院金属研究所
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G. P. Zhang,C. A. Volkert,R. Schwaiger,et al. Fatigue and thermal fatigue damage analysis of thin metal films[J]. Microelectronics Reliability,2007,47(12):2007-2013.
APA G. P. Zhang,C. A. Volkert,R. Schwaiger,R. Monig,&O. Kraft.(2007).Fatigue and thermal fatigue damage analysis of thin metal films.Microelectronics Reliability,47(12),2007-2013.
MLA G. P. Zhang,et al."Fatigue and thermal fatigue damage analysis of thin metal films".Microelectronics Reliability 47.12(2007):2007-2013.
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