A photoconductive semiconductor switch based on an individual ZnS nanobelt

IMR OpenIR

	A photoconductive semiconductor switch based on an individual ZnS nanobelt
	X. J. Zheng; Y. Q. Chen; T. Zhang; C. B. Jiang; B. Yang; B. Yuan; S. X. Mao; W. Lie
	2010
发表期刊	Scripta Materialia
ISSN	1359-6462
卷号	62 期号:7 页码:520-523
摘要	A photoconductive semiconductor switch (PCSS) based on an individual ZnS nanobelt (NB) was investigated. Under ultraviolet light (280 nm), the current-voltage curve shows that this PCSS is of high photosensitivity (similar to 10(4)), and the response time spectrum shows that this PCSS has a fast response (typical rise time 0.07 s and decay time 0.12 s) and a high-voltage response (6.7 V). Oxygen chemisorption is responsible for the improved photoconductive properties. This PCSS is a promising candidate for future integration. (C) 2009 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
部门归属	[zheng, x. j.; chen, y. q.; yang, b.; yuan, b.] xiangtan univ, minist educ, key lab low dimens mat & applicat technol, xiangtan 411105, hunan, peoples r china. [zheng, x. j.; chen, y. q.; yang, b.; yuan, b.] xiangtan univ, fac mat optoelect & phys, xiangtan 411105, hunan, peoples r china. [zhang, t.] jilin univ, coll elect sci & engn, state key lab integrated optoelect, changchun 130012, peoples r china. [jiang, c. b.] shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china. [mao, s. x.] univ pittsburgh, dept mech engn, pittsburgh, pa 15261 usa. [lie, w.] univ alberta, dept mech engn, edmonton, ab t6g 2g8, canada.;zheng, xj (reprint author), xiangtan univ, minist educ, key lab low dimens mat & applicat technol, xiangtan 411105, hunan, peoples r china;zhengxuejun@xtu.edu.cn
关键词	Photoconductive Zns Nanobelt Ultraviolet Light Photosensitivity Nanowires Devices
URL	查看原文
WOS记录号	WOS:000274888600023
引用统计	被引频次：18[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/31766
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	X. J. Zheng,Y. Q. Chen,T. Zhang,et al. A photoconductive semiconductor switch based on an individual ZnS nanobelt[J]. Scripta Materialia,2010,62(7):520-523.
APA	X. J. Zheng.,Y. Q. Chen.,T. Zhang.,C. B. Jiang.,B. Yang.,...&W. Lie.(2010).A photoconductive semiconductor switch based on an individual ZnS nanobelt.Scripta Materialia,62(7),520-523.
MLA	X. J. Zheng,et al."A photoconductive semiconductor switch based on an individual ZnS nanobelt".Scripta Materialia 62.7(2010):520-523.