The formation of stacking fault tetrahedra in Al and Cu II. SFT growth by successive absorption of vacancies generated by dipole annihilation (vol 59, pg 10, 2011)

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	The formation of stacking fault tetrahedra in Al and Cu II. SFT growth by successive absorption of vacancies generated by dipole annihilation (vol 59, pg 10, 2011)
	H. Wang; D. S. Xu; R. Yang; P. Veyssiere
	2011
发表期刊	Acta Materialia
ISSN	1359-6454
卷号	59 期号:6 页码:2563-2563
部门归属	[wang, h.; xu, d. s.; yang, r.] chinese acad sci, inst met res, shenyang 110016, peoples r china. [veyssiere, p.] cnrs onera, lem, f-92322 chatillon, france.;wang, h (reprint author), chinese acad sci, inst met res, shenyang 110016, peoples r china;haowang@imr.ac.cn
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WOS记录号	WOS:000288568500031
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/30722
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	H. Wang,D. S. Xu,R. Yang,et al. The formation of stacking fault tetrahedra in Al and Cu II. SFT growth by successive absorption of vacancies generated by dipole annihilation (vol 59, pg 10, 2011)[J]. Acta Materialia,2011,59(6):2563-2563.
APA	H. Wang,D. S. Xu,R. Yang,&P. Veyssiere.(2011).The formation of stacking fault tetrahedra in Al and Cu II. SFT growth by successive absorption of vacancies generated by dipole annihilation (vol 59, pg 10, 2011).Acta Materialia,59(6),2563-2563.
MLA	H. Wang,et al."The formation of stacking fault tetrahedra in Al and Cu II. SFT growth by successive absorption of vacancies generated by dipole annihilation (vol 59, pg 10, 2011)".Acta Materialia 59.6(2011):2563-2563.

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