Linear magnetoresistance, weak antilocalization and electron-hole coexistence in gate tunable topological insulator (BixSb1-x)2Te3 nanoplates

doi:10.1016/j.jmst.2024.12.064

IMR OpenIR

	Linear magnetoresistance, weak antilocalization and electron-hole coexistence in gate tunable topological insulator (BixSb1-x)2Te3 nanoplates
	Li, Tingting 1,2; Shi, Xudong 1,2; Li, Mingze 1,2; Gao, Xuan P. A.3; Wang, Zhenhua 1,2; Zhang, Zhidong 1
通讯作者	Li, Mingze(mzli14s@imr.ac.cn) ; Wang, Zhenhua(zhwang@imr.ac.cn)
	2025-09-20
发表期刊	JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN	1005-0302
卷号	230 页码:236-243
摘要	We report a systematic study on the transport properties of (Bi0.2Sb0.8)2Te3 and (Bi0.4Sb0.6)2Te3 nanoplates with a thickness of about 6 nm grown by chemical vapor deposition (CVD) on Si/SiO2 substrate. We achieve a significant ambipolar field effect in the two samples with different compositions by applying back-gate voltage, successfully tuning the Fermi level across the Dirac point of surface states. It is found that the Hall resistance exhibits strong non-linear behavior and magnetic field induced sign change of the slope when the Fermi level is near the Dirac point, indicating the coexistence of n-type and p-type carriers. Moreover, this coincides with the striking crossover from weak antilocalization (WAL) to linear magnetoresistance (LMR). These gate and temperature dependent magneto-transport studies provide a deeper insight into the nature of LMR and WAL in topological materials. (c) 2025 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
关键词	Topological insulators Non-saturating linear magnetoresistance (LMR) Weak antilocalization (WAL) Nonlinear Hall resistance Ambipolar field effect
资助者	National Natu-ral Science Foundation of China
DOI	10.1016/j.jmst.2024.12.064
收录类别	SCI
语种	英语
资助项目	National Natu-ral Science Foundation of China[52201233] ; National Natu-ral Science Foundation of China[52371204] ; National Natu-ral Science Foundation of China[52031014]
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:001444373400001
出版者	ELSEVIER
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/192001
专题	中国科学院金属研究所
通讯作者	Li, Mingze; Wang, Zhenhua
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China 3.Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA
推荐引用方式 GB/T 7714	Li, Tingting,Shi, Xudong,Li, Mingze,et al. Linear magnetoresistance, weak antilocalization and electron-hole coexistence in gate tunable topological insulator (BixSb1-x)2Te3 nanoplates[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2025,230:236-243.
APA	Li, Tingting,Shi, Xudong,Li, Mingze,Gao, Xuan P. A.,Wang, Zhenhua,&Zhang, Zhidong.(2025).Linear magnetoresistance, weak antilocalization and electron-hole coexistence in gate tunable topological insulator (BixSb1-x)2Te3 nanoplates.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,230,236-243.
MLA	Li, Tingting,et al."Linear magnetoresistance, weak antilocalization and electron-hole coexistence in gate tunable topological insulator (BixSb1-x)2Te3 nanoplates".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 230(2025):236-243.