Atomic and electronic structures of domain boundaries in LaTiO<sub>3</sub> thin films

doi:10.1063/5.0207483

IMR OpenIR

	Atomic and electronic structures of domain boundaries in LaTiO₃ thin films
	Qiao, Beibei 1,2; Sun, Ziyi 1; Jiang, Yixiao 1,2; Yao, Tingting 1,2; Jin, Qianqian 3; He, Neng 1; Tao, Ang 1; Yan, Xuexi 1; Yang, Zhiqing 2; Chen, Chunlin 1,2; Ma, Xiu-Liang 4,5; Ye, Hengqiang 2
通讯作者	Yao, Tingting(ttyao11s@imr.ac.cn) ; Chen, Chunlin(clchen@imr.ac.cn)
	2024-06-07
发表期刊	JOURNAL OF APPLIED PHYSICS
ISSN	0021-8979
卷号	135 期号:21 页码:9
摘要	Domain boundaries in perovskite oxides often exhibit abundant physical properties and phenomena. Here, epitaxial LaTiO3 thin films on (100) SrTiO3 substrates are prepared by pulsed-laser deposition. X-ray diffraction and transmission electron microscopy investigations reveal that the epitaxial LaTiO(3 )thin films have good crystallinity but a high density of domain boundaries. Atomic-scale scanning transmission electron microscopy observations reveal that two types of domain boundaries are formed in the LaTiO3 thin films. The type I domain boundaries are formed on the {100} crystal planes, while the type II domain boundaries on the {110} crystal planes. Electron energy-loss spectroscopy analyses suggest that the valence states of Ti ions at the type I domain boundaries are +3, while those at the type II domain boundaries are +4. First-principles calculations reveal that the bandgap decreases at both domain boundaries compared to the bulk. The carrier concentration at the type I domain boundaries is significantly higher than that of the bulk, while the carrier concentration at the type II domain boundaries is lower. These findings suggest that domain boundaries play an important role in tailoring the electrical properties of the LaTiO3 thin films, thereby promoting the potential applications and property modulation of related materials and devices.
资助者	National Natural Science Foundation of China10.13039/501100001809 ; National Natural Science Foundation of China ; Ji Hua Laboratory Project ; Basic and Applied Basic Research Major Programme of Guangdong Province, China
DOI	10.1063/5.0207483
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China10.13039/501100001809[52125101] ; National Natural Science Foundation of China10.13039/501100001809[52271015] ; National Natural Science Foundation of China[X210141TL210] ; Ji Hua Laboratory Project[2021B0301030003] ; Basic and Applied Basic Research Major Programme of Guangdong Province, China
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:001238466700004
出版者	AIP Publishing
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/186971
专题	中国科学院金属研究所
通讯作者	Yao, Tingting; Chen, Chunlin
作者单位	1.Chinese Acad Sci, Univ Sci & Technol China, Inst Met Res, Sch Mat Sci & Engn,Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Ji Hua Lab, Foshan 528200, Peoples R China 3.Guangxi Univ Sci & Technol, Sch Microelect & Mat Engn, Liuzhou 545006, Peoples R China 4.Songshan Lake Mat Lab, Bay Area Ctr Electron Microscopy, Dongguan 523808, Peoples R China 5.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Qiao, Beibei,Sun, Ziyi,Jiang, Yixiao,et al. Atomic and electronic structures of domain boundaries in LaTiO₃ thin films[J]. JOURNAL OF APPLIED PHYSICS,2024,135(21):9.
APA	Qiao, Beibei.,Sun, Ziyi.,Jiang, Yixiao.,Yao, Tingting.,Jin, Qianqian.,...&Ye, Hengqiang.(2024).Atomic and electronic structures of domain boundaries in LaTiO₃ thin films.JOURNAL OF APPLIED PHYSICS,135(21),9.
MLA	Qiao, Beibei,et al."Atomic and electronic structures of domain boundaries in LaTiO₃ thin films".JOURNAL OF APPLIED PHYSICS 135.21(2024):9.