Modulating band alignment at the 3D metal/semiconductor interface of liquid metal-embraced semiconductor photoelectrodes for water splitting

doi:10.1007/s40843-024-2929-6

IMR OpenIR

	Modulating band alignment at the 3D metal/semiconductor interface of liquid metal-embraced semiconductor photoelectrodes for water splitting
	Chen, Xiangtao 1; Zhen, Chao 2; Qiu, Jianhang 2; Li, Na 1; Jia, Nan 1; Liu, Gang 2,3
通讯作者	Zhen, Chao(czhen@imr.ac.cn) ; Liu, Gang(gangliu@imr.ac.cn)
	2024-06-01
发表期刊	SCIENCE CHINA-MATERIALS
ISSN	2095-8226
卷号	67 期号:6 页码:1804-1811
摘要	The transfer of photogenerated charges from semiconductors as photoabsorbers to conductive substrates as current collectors is closely correlated with the interface band alignment, particularly for an emerging class of photoelectrodes possessing the three dimensional (3D) interface that semiconductors are embraced by low-melting-point (LMP) metals (i.e., Field's metals). Herein, the interface band alignment is modulated to promote the transfer of photogenerated charges by taking advantage of the composition-dependent work function (WF) of liquid metal as the current collector. It is found that embracing ZnO particles by indium tin (IT) alloy leads to the Ohmic contact, while embracing ZnO particles by bismuth indium tin (BIT) alloy leads to the Schottky contact. Consequently, the photocurrent density of the resulting IT-embraced ZnO (IT/ZnO) photoelectrode with superior charge collection and separation ability for photoelectrochemical water splitting is increased by 19% from 0.52 mA cm(-2) of BIT-embraced ZnO (BIT/ZnO) to 0.62 mA cm(-2), ranging on the top of the representative ZnO photoelectrodes. In contrast, the photoelectrodes of WO3, TiO2, and Cu2O embraced with IT or BIT have the same contact type and nearly identical performance. This work demonstrates the potential of changing the metal/semiconductor contact type to enhance the performance of LMP metal-embraced semiconductor photoelectrodes by choosing liquid metals with different WFs, paving a way to build efficient photoelectrodes.
关键词	metal-embraced photoelectrodes 3D interfaces Ohmic contact water splitting
资助者	National Key R&D Program of China ; National Natural Science Foundation of China ; Youth Innovation Promotion Association of the Chinese Academy of Sciences ; CAS Projects for Young Scientists in Basic Research ; New Cornerstone Science Foundation through the XPLORER PRIZE
DOI	10.1007/s40843-024-2929-6
收录类别	SCI
语种	英语
资助项目	National Key R&D Program of China[2021YFA1500800] ; National Natural Science Foundation of China[52072377] ; National Natural Science Foundation of China[51825204] ; Youth Innovation Promotion Association of the Chinese Academy of Sciences[2020192] ; CAS Projects for Young Scientists in Basic Research[YSBR-004] ; New Cornerstone Science Foundation through the XPLORER PRIZE
WOS研究方向	Materials Science
WOS类目	Materials Science, Multidisciplinary
WOS记录号	WOS:001226783000001
出版者	SCIENCE PRESS
引用统计	被引频次：4[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/186506
专题	中国科学院金属研究所
通讯作者	Zhen, Chao; Liu, Gang
作者单位	1.Northeastern Univ, Sch Mat Sci & Engn, Key Lab Anisotropy & Texture Mat, Minist Educ, Shenyang 110819, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 3.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Chen, Xiangtao,Zhen, Chao,Qiu, Jianhang,et al. Modulating band alignment at the 3D metal/semiconductor interface of liquid metal-embraced semiconductor photoelectrodes for water splitting[J]. SCIENCE CHINA-MATERIALS,2024,67(6):1804-1811.
APA	Chen, Xiangtao,Zhen, Chao,Qiu, Jianhang,Li, Na,Jia, Nan,&Liu, Gang.(2024).Modulating band alignment at the 3D metal/semiconductor interface of liquid metal-embraced semiconductor photoelectrodes for water splitting.SCIENCE CHINA-MATERIALS,67(6),1804-1811.
MLA	Chen, Xiangtao,et al."Modulating band alignment at the 3D metal/semiconductor interface of liquid metal-embraced semiconductor photoelectrodes for water splitting".SCIENCE CHINA-MATERIALS 67.6(2024):1804-1811.