Thermal stability and diffusion barrier performance of amorphous Ni-P layer at Sn/Ni-P/Cu interface

doi:10.1007/s10854-024-12637-x

IMR OpenIR

	Thermal stability and diffusion barrier performance of amorphous Ni-P layer at Sn/Ni-P/Cu interface
	Yao, Jinye 1; Shang, Min 1; Chen, Xiangxu 1; Xing, Jing 1; Guo, Tianhao 2; Wang, Yunpeng 1; Ma, Haitao 1; Gao, Zhaoqing3,4
通讯作者	Ma, Haitao(htma@dlut.edu.cn) ; Gao, Zhaoqing(zqgao@imr.ac.cn)
	2024-05-01
发表期刊	JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN	0957-4522
卷号	35 期号:13 页码:15
摘要	As chip integration increases and micro-bump size reduces in 3D integrated circuits (ICs), issues with service reliability due to electromigration and thermomigration are becoming more prevalent. This paper investigates the thermal stability of an amorphous Ni-P layer at different heating treatment temperatures and the microstructure evolution of the Sn/Ni-P/Cu interface under different soldering conditions. The study indicates that the maximum temperature for maintaining an amorphous Ni-P barrier layer is below 250 degrees C. The amorphous layer of Ni-P acts as an effective inhibitor of Cu atom diffusion at the Sn/Ni-P/Cu interface during soldering. However, when exposed to soldering conditions exceeding 275 degrees C for 5 min or more, the amorphous layer of Ni-P, with a thickness of approximately 1.8 mu m, loses its ability to act as a barrier layer at the Sn/Ni-P/Cu interface. This occurs specifically under conditions of 300 degrees C and dwell times less than 5 min. Additionally, the consumption of the Ni-P barrier layer is mainly governed by grain boundary diffusion and bulk diffusion. The findings of this study could provide theoretical guidance for designing the structure of solder joints with barrier layers.
资助者	Shenyang National Laboratory for Materials Science
DOI	10.1007/s10854-024-12637-x
收录类别	SCI
语种	英语
资助项目	Shenyang National Laboratory for Materials Science
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:001214947800008
出版者	SPRINGER
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/185794
专题	中国科学院金属研究所
通讯作者	Ma, Haitao; Gao, Zhaoqing
作者单位	1.Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116000, Peoples R China 2.Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 4.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Yao, Jinye,Shang, Min,Chen, Xiangxu,et al. Thermal stability and diffusion barrier performance of amorphous Ni-P layer at Sn/Ni-P/Cu interface[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2024,35(13):15.
APA	Yao, Jinye.,Shang, Min.,Chen, Xiangxu.,Xing, Jing.,Guo, Tianhao.,...&Gao, Zhaoqing.(2024).Thermal stability and diffusion barrier performance of amorphous Ni-P layer at Sn/Ni-P/Cu interface.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,35(13),15.
MLA	Yao, Jinye,et al."Thermal stability and diffusion barrier performance of amorphous Ni-P layer at Sn/Ni-P/Cu interface".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 35.13(2024):15.