Enhanced Exchange Bias in Epitaxial High-Entropy Oxide Heterostructures

doi:10.1021/acsami.3c14943

IMR OpenIR

	Enhanced Exchange Bias in Epitaxial High-Entropy Oxide Heterostructures
	Wang, Hailin 1; Huang, Haoliang 2,3,4; Feng, Yanpeng 5; Ku, Yu-Chieh 6; Liu, Cheng-En 6; Chen, Shanquan 1; Farhan, Alan 7; Piamonteze, Cinthia 8; Lu, Yalin 2,3; Tang, Yunlong 9; Wei, Jun 10; Chen, Lang 4; Chang, Chun-Fu 11; Kuo, Chang-Yang 6,12; Chen, Zuhuang 1,10
通讯作者	Kuo, Chang-Yang(changyangkuo@nycu.edu.tw) ; Chen, Zuhuang(zuhuang@hit.edu.cn)
	2023-12-07
发表期刊	ACS APPLIED MATERIALS & INTERFACES
ISSN	1944-8244
卷号	15 期号:50 页码:58643-58650
摘要	High-entropy oxides (HEOs) have gained significant interest in recent years due to their unique structural characteristics and potential to tailor functional properties. However, the electronic structure of the HEOs currently remains vastly unknown. In this work, combining magnetometry measurements, scanning transmission electron microscopy, and element-specific X-ray absorption spectroscopy, the electronic structure and magnetic properties of the perovskite-HEO La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O-3 epitaxial thin films are systemically studied. It is found that enhanced magnetic frustration emerges from competing exchange interactions of the five transition-metal cations with energetically favorable half-filled/full-filled electron configurations, resulting in an unprecedented large vertical exchange bias effect in the single-crystalline films. Furthermore, our findings demonstrate that the La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O-3 layer with a thickness down to 1 nm can be used as a pinning layer and strongly coupled with a ferromagnetic La0.7Sr0.3MnO3 layer, leading to a notable exchange bias and coercivity enhancement in a cooling field as small as 5 Oe. Our studies not only provide invaluable insight into the electronic structure of HEOs but also pave the way for a new era of large bias materials for spintronics devices.
关键词	high-entropy oxides exchange bias effect perovskite oxide epitaxial films heterostructures
资助者	Ministry of Science and Technology, Taiwan ; Guangdong Basic and Applied Basic Research Foundation ; Shenzhen Science and Technology Innovation project ; Shenzhen Science and Technology Program ; Fundamental Research Funds for the Central Universities ; Talent Recruitment Project of Guangdong ; China Postdoctoral Science Foundation ; Natural Science Foundation of Anhui Province ; Ministry of Science and Technology in Taiwan ; MOST ; Max Planck-POSTECH-Hsinchu Center for Complex Phase Materials ; National Natural Science Foundation of China ; National Key R&D Program of China ; Guangdong Provincial Key Laboratory Program ; SUSTech Core Research Facilities
DOI	10.1021/acsami.3c14943
收录类别	SCI
语种	英语
资助项目	Ministry of Science and Technology, Taiwan[2020B1515020029] ; Guangdong Basic and Applied Basic Research Foundation[JCYJ20200109112829287] ; Shenzhen Science and Technology Innovation project[KQTD20200820113045083] ; Shenzhen Science and Technology Program[HIT.OCEF.2022038] ; Fundamental Research Funds for the Central Universities[2019QN01C202] ; Talent Recruitment Project of Guangdong[2022M720942] ; China Postdoctoral Science Foundation[2208085ME113] ; Natural Science Foundation of Anhui Province ; Ministry of Science and Technology in Taiwan[110-2112-M-A49-002-MY3] ; MOST ; Max Planck-POSTECH-Hsinchu Center for Complex Phase Materials[51972160] ; National Natural Science Foundation of China[2022YFA1402903] ; National Key R&D Program of China[2021B1212040001] ; Guangdong Provincial Key Laboratory Program ; SUSTech Core Research Facilities
WOS研究方向	Science & Technology - Other Topics ; Materials Science
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:001141216000001
出版者	AMER CHEMICAL SOC
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/183428
专题	中国科学院金属研究所
通讯作者	Kuo, Chang-Yang; Chen, Zuhuang
作者单位	1.Harbin Inst Technol, Sch Mat Sci & Engn, Shenzhen 518055, Peoples R China 2.Univ Sci & Technol China, Anhui Lab Adv Photon Sci & Technol, Hefei 230026, Peoples R China 3.Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Hefei 230026, Peoples R China 4.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China 5.Songshan Lake Mat Lab, Dongguan 523808, Peoples R China 6.Natl Yang Ming Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan 7.Baylor Univ, Dept Phys, Waco, TX 76798 USA 8.Paul Scherrer Inst, CH-5232 Villigen, Switzerland 9.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 10.Harbin Inst Technol, Flexible Printed Elect Technol Ctr, Shenzhen 518055, Peoples R China 11.Max Planck Inst Chem Phys Solids, D-01187 Dresden, Germany 12.Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan
推荐引用方式 GB/T 7714	Wang, Hailin,Huang, Haoliang,Feng, Yanpeng,et al. Enhanced Exchange Bias in Epitaxial High-Entropy Oxide Heterostructures[J]. ACS APPLIED MATERIALS & INTERFACES,2023,15(50):58643-58650.
APA	Wang, Hailin.,Huang, Haoliang.,Feng, Yanpeng.,Ku, Yu-Chieh.,Liu, Cheng-En.,...&Chen, Zuhuang.(2023).Enhanced Exchange Bias in Epitaxial High-Entropy Oxide Heterostructures.ACS APPLIED MATERIALS & INTERFACES,15(50),58643-58650.
MLA	Wang, Hailin,et al."Enhanced Exchange Bias in Epitaxial High-Entropy Oxide Heterostructures".ACS APPLIED MATERIALS & INTERFACES 15.50(2023):58643-58650.