Effect of Cu/Ga interfacial reaction on heat transfer performance

doi:10.1007/s10854-023-10782-3

IMR OpenIR

	Effect of Cu/Ga interfacial reaction on heat transfer performance
	Du, Xinyu 1,3; Wang, Wendong 2,3; Ding, Zifeng 1; Wang, Xiaojing 1; Qiao, Yanxin 1; Wei, Song 4; Zhu, Qingsheng 2,3; Guo, Jingdong 2,3
通讯作者	Guo, Jingdong(jdguo@imr.ac.cn)
	2023-06-01
发表期刊	JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN	0957-4522
卷号	34 期号:17 页码:10
摘要	The interfacial reactions between Ga and Cu were studied under isothermal conditions at 70, 110, and 150 degrees C. The SEM morphology and XRD analysis revealed that only CuGa2 phases were formed at these temperatures. The growth of CuGa2 is described by the parabolic law, indicating that the body diffusion mechanism plays a dominant role in its growth. The activation energy of CuGa2 change was calculated as 14.25 kJ/mol. The effect of the intermetallic compounds (IMCs) growth on the heat transfer performance of gallium-based thermal interface materials (Ga-based TIMs) has been investigated. Thermal resistance test results show that the thermal resistance value rapidly decreases during the aging from 0 to 6 h and increases slowly in the subsequent aging process. These findings suggest that the thermal transfer performance of Ga-based TIM will not be significantly impacted by the formation and growth of CuGa2 at the interface.
资助者	National Natural Science Foundation of China ; Guangxi Natural Science Foundation ; Guangxi Science and Technology Program ; Science and Technology Plan Project of Yunnan province
DOI	10.1007/s10854-023-10782-3
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[51971231] ; Guangxi Natural Science Foundation[2020GXNSFBA297109] ; Guangxi Science and Technology Program[GuikeAD20297023] ; Science and Technology Plan Project of Yunnan province[202101BC070001-007]
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:001007922800003
出版者	SPRINGER
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/178226
专题	中国科学院金属研究所
通讯作者	Guo, Jingdong
作者单位	1.Jiangsu Univ Sci & Technol, Coll Mat Sci & Engn, Zhenjiang 212001, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 4.Guilin Univ Elect Technol, Sch Mech & Elect Engn, Guangxi Key Lab Mfg Syst & Adv Mfg Technol, Guilin 541004, Peoples R China
推荐引用方式 GB/T 7714	Du, Xinyu,Wang, Wendong,Ding, Zifeng,et al. Effect of Cu/Ga interfacial reaction on heat transfer performance[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2023,34(17):10.
APA	Du, Xinyu.,Wang, Wendong.,Ding, Zifeng.,Wang, Xiaojing.,Qiao, Yanxin.,...&Guo, Jingdong.(2023).Effect of Cu/Ga interfacial reaction on heat transfer performance.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,34(17),10.
MLA	Du, Xinyu,et al."Effect of Cu/Ga interfacial reaction on heat transfer performance".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 34.17(2023):10.