| Carrier Trapping in Wrinkled 2D Monolayer MoS2 for Ultrathin Memory | |
| Zhang, Rongjie1,2; Lai, Yongjue1,2; Chen, Wenjun1,2; Teng, Changjiu1,2; Sun, Yujie1,2; Yang, Liusi1,2; Wang, Jingyun1,2; Liu, Bilu1,2; Cheng, Hui-Ming1,2,3,4 | |
| 通讯作者 | Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(hmcheng@sz.tsinghua.edu.cn) |
| 2022-04-26 | |
| 发表期刊 | ACS NANO
 |
| ISSN | 1936-0851 |
| 卷号 | 16期号:4页码:6309-6316 |
| 摘要 | Atomically thin two-dimensional (2D) semiconductors are promising for next-generation memory to meet the scaling down of semiconductor industry. However, the controllability of carrier trapping status, which is the key figure of merit for memory devices, still halts the application of 2D semiconductor-based memory. Here, we introduce a scheme for 2D material based memory using wrinkles in monolayer 2D semiconductors as controllable carrier trapping centers. Memory devices based on wrinkled monolayer MoS2 show multilevel storage capability, an on/off ratio of 106, and a retention time of >104 s, as well as tunable linear and exponential behaviors at the stimulation of different gate voltages. We also reveal an interesting wrinkle-based carrier trapping mechanism by using conductive atomic force microscopy. This work offers a configuration to control carriers in ultrathin memory devices and for in-memory calculations. |
| 关键词 | 2D materials monolayer MoS 2 wrinkles memory carrier trapping conductive AFM |
| 资助者 | National Natural Science Foundation of China ; National Science Fund for Distinguished Young Scholars ; Guangdong Innovative and Entrepreneurial Research Team Program ; Bureau of Industry and Information Technology of Shenzhen ; Shenzhen Basic Research Program |
| DOI | 10.1021/acsnano.2c00350 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 资助项目 | National Natural Science Foundation of China[51991343] ; National Natural Science Foundation of China[51991340] ; National Natural Science Foundation of China[52188101] ; National Science Fund for Distinguished Young Scholars[52125309] ; Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Bureau of Industry and Information Technology of Shenzhen[201901171523] ; Shenzhen Basic Research Program[JCYJ20200109144616617] |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science |
| WOS类目 | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| WOS记录号 | WOS:000813154800001 |
| 出版者 | AMER CHEMICAL SOC |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.imr.ac.cn/handle/321006/174703 |
| 专题 | 中国科学院金属研究所 |
| 通讯作者 | Liu, Bilu; Cheng, Hui-Ming |
| 作者单位 | 1.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Shenzhen Int Grad Sch, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China 2.Tsinghua Univ, Inst Mat Res, Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 4.Chinese Acad Sci, Fac Mat & Engn, Shenzhen Inst Adv Technol, Inst Technol Carbon Neutral, Shenzhen 518055, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Rongjie,Lai, Yongjue,Chen, Wenjun,et al. Carrier Trapping in Wrinkled 2D Monolayer MoS2 for Ultrathin Memory[J]. ACS NANO,2022,16(4):6309-6316. |
| APA | Zhang, Rongjie.,Lai, Yongjue.,Chen, Wenjun.,Teng, Changjiu.,Sun, Yujie.,...&Cheng, Hui-Ming.(2022).Carrier Trapping in Wrinkled 2D Monolayer MoS2 for Ultrathin Memory.ACS NANO,16(4),6309-6316. |
| MLA | Zhang, Rongjie,et al."Carrier Trapping in Wrinkled 2D Monolayer MoS2 for Ultrathin Memory".ACS NANO 16.4(2022):6309-6316. |
| 条目包含的文件 | 条目无相关文件。 | |||||
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