| Fermi-Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer | |
| Wei, Yu-Ning1,2; Hu, Xian-Gang1,2; Zhang, Jian-Wei3; Tong, Bo1,2; Du, Jin-Hong1,2; Liu, Chang1,2; Sun, Dong-Ming1,2; Liu, Chi1,2 | |
| 通讯作者 | Sun, Dong-Ming(dmsun@imr.ac.cn) ; Liu, Chi(chiliu@imr.ac.cn) |
| 2022-05-13 | |
| 发表期刊 | SMALL
 |
| ISSN | 1613-6810 |
| 页码 | 7 |
| 摘要 | Germanium (Ge)-based devices are recognized as one of the most promising next-generation technologies for extending Moore's law. However, one of the critical issues is Fermi-level pinning (FLP) at the metal/n-Ge interface, and the resulting large contact resistance seriously degrades their performance. The insertion of a thin layer is one main technique for FLP modulation; however, the contact resistance is still limited by the remaining barrier height and the resistance induced by the insertion layer. In addition, the proposed depinning mechanisms are also controversial. Here, the authors report a wafer-scale carbon nanotube (CNT) insertion method to alleviate FLP. The inserted conductive film reduces the effective Schottky barrier height without inducing a large resistance, leading to ohmic contact and the smallest contact resistance between a metal and a lightly doped n-Ge. These devices also indicate that the metal-induced gap states mechanism is responsible for the pinning. Based on the proposed technology, a wafer-scale planar diode array is fabricated at room temperature without using the traditional ion-implantation and annealing technology, achieving an on-to-off current ratio of 4.59 x 10(4). This work provides a new way of FLP modulation that helps to improve device performance with new materials. |
| 关键词 | carbon nanotube films Fermi-level pinning germanium metal-induced gap states ohmic contacts |
| 资助者 | National Natural Science Foundation of China ; Chinese Academy of Sciences |
| DOI | 10.1002/smll.202201840 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 资助项目 | National Natural Science Foundation of China[62074150] ; National Natural Science Foundation of China[61704175] ; National Natural Science Foundation of China[51625203] ; Chinese Academy of Sciences[SYNL2020] ; Chinese Academy of Sciences[SKLA-2019-03] |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS类目 | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| WOS记录号 | WOS:000794260000001 |
| 出版者 | WILEY-V C H VERLAG GMBH |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.imr.ac.cn/handle/321006/173918 |
| 专题 | 中国科学院金属研究所 |
| 通讯作者 | Sun, Dong-Ming; Liu, Chi |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China 3.Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, 3888 Dong Nanhu Rd, Changchun 130033, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wei, Yu-Ning,Hu, Xian-Gang,Zhang, Jian-Wei,et al. Fermi-Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer[J]. SMALL,2022:7. |
| APA | Wei, Yu-Ning.,Hu, Xian-Gang.,Zhang, Jian-Wei.,Tong, Bo.,Du, Jin-Hong.,...&Liu, Chi.(2022).Fermi-Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer.SMALL,7. |
| MLA | Wei, Yu-Ning,et al."Fermi-Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer".SMALL (2022):7. |
| 条目包含的文件 | 条目无相关文件。 | |||||
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