A silicon-graphene-silicon transistor with an improved current gain

doi:10.1016/j.jmst.2021.06.061

IMR OpenIR

	A silicon-graphene-silicon transistor with an improved current gain
	Liu, Chi 1; Yang, Xu-Qi 1,2; Ma, Wei 1,2; Wang, Xin-Zhe 1,2; Jiang, Hai-Yan 1,2; Ren, Wen-Cai 1,2; Sun, Dong-Ming 1,2
通讯作者	Sun, Dong-Ming(dmsun@imr.ac.cn)
	2022-03-30
发表期刊	JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN	1005-0302
卷号	104 页码:127-130
摘要	In history, semiconductor-metal-semiconductor transistor (SMST) was proposed for frequency improve-ment. However, a general fabrication method is still missing due to the unsolved technological problem of deposition of a general crystalline semiconductor on metal, and a thinner metal base is also difficult to be fabricated with high quality. Recently, due to the atomic thickness of graphene, the concept of semiconductor-graphene-semiconductor transistor (SGST) has emerged which leads to the renaissance of SMST, however the experimental study is in its infancy. In this letter, SMST and SGST are fabricated using Si membrane transfer. It is found the common base current gain can be improved from about 0.5% in a Si-Au-Si transistor to about 1% in a Si-Gr-Ge one, and to above 10% in a Si-Gr-Si one, which is attributed to both the ultra-thin thickness and the quantum capacitance effect of graphene. (c) 2022 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
关键词	Semiconductor metal semiconductor transistor Graphene base transistor Graphene base heterojunction transistor
资助者	National Natural Science Foundation of China ; Chinese Academy of Sciences (SYNL Young Talent Project)
DOI	10.1016/j.jmst.2021.06.061
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[62074150] ; National Natural Science Foundation of China[61704175] ; Chinese Academy of Sciences (SYNL Young Talent Project)[SKLA-2019-03]
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000773043300005
出版者	JOURNAL MATER SCI TECHNOL
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/172946
专题	中国科学院金属研究所
通讯作者	Sun, Dong-Ming
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Liu, Chi,Yang, Xu-Qi,Ma, Wei,et al. A silicon-graphene-silicon transistor with an improved current gain[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2022,104:127-130.
APA	Liu, Chi.,Yang, Xu-Qi.,Ma, Wei.,Wang, Xin-Zhe.,Jiang, Hai-Yan.,...&Sun, Dong-Ming.(2022).A silicon-graphene-silicon transistor with an improved current gain.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,104,127-130.
MLA	Liu, Chi,et al."A silicon-graphene-silicon transistor with an improved current gain".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 104(2022):127-130.