High-Purity Monochiral Carbon Nanotubes with a 1.2 nm Diameter for High-Performance Field-Effect Transistors

doi:10.1002/adfm.202107119

IMR OpenIR

	High-Purity Monochiral Carbon Nanotubes with a 1.2 nm Diameter for High-Performance Field-Effect Transistors
	Li, Yahui 1,2,3; Zheng, Miaomiao 2,4; Yao, Jian 2,4; Gong, Wenbin 5; Li, Yijun 6; Tang, Jianshi 6; Feng, Shun 7; Han, Ruyue 7; Sui, Qicheng 2,3; Qiu, Song 1,2; Kang, Lixing 1,2; Jin, Hehua 1,2; Sun, Dongming 7; Li, Qingwen 1,2
通讯作者	Qiu, Song(sqiu2010@sinano.ac.cn) ; Jin, Hehua(hhjin2008@sinano.ac.cn) ; Sun, Dongming(dmsun@imr.ac.cn) ; Li, Qingwen(qwli2007@sinano.ac.cn)
	2021-10-01
发表期刊	ADVANCED FUNCTIONAL MATERIALS
ISSN	1616-301X
页码	8
摘要	Monochiral single-walled carbon nanotubes (SWCNTs) are promising materials with potential applications in 3D integrated circuits and optoelectronic hybrid circuits. However, the purity and device performance of monochiral SWCNTs are still far lower than expected. Here, the authors demonstrate that specific monochiral SWCNTs can be wrapped by conjugated polymers containing pyridine units, and the supramolecular assemblies show surprising suspension stability even after high-intensity ultracentrifugation. Additionally, two novel methods are developed, namely, enhanced ultracentrifugation (E-UCG) and stepwise extraction processing (STEP), which successfully achieve isolation of (10,8) and (12,5) SWCNTs with respective diameters of 1.24 and 1.2 nm at high monochiral purity (92.3% and 95.6%). Their S-11 absorption and fluorescence emission peaks are both at approximate to 1.5 mu m (optical telecommunications C-band). Both micro- and nanoscale field-effect transistor (FET) devices can be fabricated from the as-isolated (10,8) SWCNTs, and these FETs exhibit excellent electrical performance and a high semiconducting purity of up to 99.94%.
关键词	field-effect transistors carbon nanotubes conjugated polymers monochiral
DOI	10.1002/adfm.202107119
收录类别	SCI
语种	英语
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000702457200001
出版者	WILEY-V C H VERLAG GMBH
引用统计	被引频次：31[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/166675
专题	中国科学院金属研究所
通讯作者	Qiu, Song; Jin, Hehua; Sun, Dongming; Li, Qingwen
作者单位	1.Univ Sci & Technol China, Sch Nanotech & Nanobion, 96 Jinzhai Rd, Hefei 230026, Peoples R China 2.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Div Adv Nanomat, 398 Ruoshui Rd, Suzhou 215123, Peoples R China 3.Univ Sci & Technol China, Nano Sci & Technol Inst, 166 Renai Rd, Suzhou 215123, Peoples R China 4.Shanghai Tech Univ, Sch Phys Sci & Technol, 393 Middle Huaxia Rd, Shanghai 201210, Peoples R China 5.Xuzhou Univ Technol, Sch Phys & Energy, Xuzhou 221018, Jiangsu, Peoples R China 6.Tsinghua Univ, Beijing Innovat Ctr Future Chips ICFC, Inst Microelect, 30 Shuangqing Rd, Beijing 100084, Peoples R China 7.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Li, Yahui,Zheng, Miaomiao,Yao, Jian,et al. High-Purity Monochiral Carbon Nanotubes with a 1.2 nm Diameter for High-Performance Field-Effect Transistors[J]. ADVANCED FUNCTIONAL MATERIALS,2021:8.
APA	Li, Yahui.,Zheng, Miaomiao.,Yao, Jian.,Gong, Wenbin.,Li, Yijun.,...&Li, Qingwen.(2021).High-Purity Monochiral Carbon Nanotubes with a 1.2 nm Diameter for High-Performance Field-Effect Transistors.ADVANCED FUNCTIONAL MATERIALS,8.
MLA	Li, Yahui,et al."High-Purity Monochiral Carbon Nanotubes with a 1.2 nm Diameter for High-Performance Field-Effect Transistors".ADVANCED FUNCTIONAL MATERIALS (2021):8.