| Electron mobility in modulation-doped AlSb/InAs quantum wells | |
| Li, Yanbo1,2; Zhang, Yang1,2; Zeng, Yiping1,2 | |
| 通讯作者 | Zhang, Yang(terahertzantenna@163.com) |
| 2011-04-01 | |
| 发表期刊 | JOURNAL OF APPLIED PHYSICS
 |
| ISSN | 0021-8979 |
| 卷号 | 109期号:7页码:7 |
| 摘要 | We present a theoretical study of electron mobility in modulation-doped AlSb/InAs quantum wells. The theory also accounts for the nonparabolicity effect. All major scattering mechanisms, including scattering by deformation potential and piezoelectric acoustic phonons, polar optical phonons, ionized impurities, and interface roughness, have been included in our calculations. The low field transport properties of the two dimensional electron gas (2DEG) in the AlSb/InAs quantum wells are studied as a function of temperature, quantum well width, and spacer width and strategies for optimizing the 2DEG mobility are discussed. Depending on the quantum well parameters, the high-mobility limit in this quantum well structure may be determined by either ionized impurity scattering or interface-roughness scattering. The calculated 2DEG mobilities are in very good agreement with the reported experimental data for modulation-doped AlSb/InAs quantum wells. (C) 2011 American Institute of Physics. [doi:10.1063/1.3552417] |
| 资助者 | Chinese Academy of Sciences ; Beijing Municipal Natural Science Foundation ; Beijing Nova Program |
| DOI | 10.1063/1.3552417 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 资助项目 | Chinese Academy of Sciences[ISCAS2009T04] ; Beijing Municipal Natural Science Foundation[2112040] ; Beijing Nova Program[2010B056] |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| WOS记录号 | WOS:000289949000051 |
| 出版者 | AMER INST PHYSICS |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.imr.ac.cn/handle/321006/105863 |
| 专题 | 中国科学院金属研究所 |
| 通讯作者 | Zhang, Yang |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Yanbo,Zhang, Yang,Zeng, Yiping. Electron mobility in modulation-doped AlSb/InAs quantum wells[J]. JOURNAL OF APPLIED PHYSICS,2011,109(7):7. |
| APA | Li, Yanbo,Zhang, Yang,&Zeng, Yiping.(2011).Electron mobility in modulation-doped AlSb/InAs quantum wells.JOURNAL OF APPLIED PHYSICS,109(7),7. |
| MLA | Li, Yanbo,et al."Electron mobility in modulation-doped AlSb/InAs quantum wells".JOURNAL OF APPLIED PHYSICS 109.7(2011):7. |
| 条目包含的文件 | 条目无相关文件。 | |||||
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