The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors

doi:10.1051/epjap/2011110209

IMR OpenIR

	The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors
	Lin, D. F.1; Wang, X. L.1,2,3; Xiao, H. L.1,2; Wang, C. M.1,2; Jiang, L. J.1,2; Feng, C.1,2; Chen, H.1,2; Hou, Q. F.1; Deng, Q. W.1; Bi, Y.1; Kang, H.1
通讯作者	Lin, D. F.(dflin@semi.ac.cn)
	2011-09-01
发表期刊	EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
ISSN	1286-0042
卷号	55 期号:3 页码:5
摘要	The temperature dependence of the I-V characteristics on Au/Ni-HEMT Schottky contacts was measured and analyzed. Large deviations from the thermionic emission and thermionic-field emission model were observed in the I-V-T characteristics. The thin surface barrier model only fits the measured curves in the high bias region, but deviates drastically in the low bias region. Using a revised thin surface barrier model, the calculated curves match well with the measured curves. It is also found that tunneling emission model is the dominant current transport mechanism at low temperature, yet thermionic-field emission model is the dominant current transport mechanism at high temperature.
资助者	Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China
DOI	10.1051/epjap/2011110209
收录类别	SCI
语种	英语
资助项目	Chinese Academy of Sciences[YYYJ-0701-02] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503]
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000294009500004
出版者	CAMBRIDGE UNIV PRESS
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/104839
专题	中国科学院金属研究所
通讯作者	Lin, D. F.
作者单位	1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Lin, D. F.,Wang, X. L.,Xiao, H. L.,et al. The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors[J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,2011,55(3):5.
APA	Lin, D. F..,Wang, X. L..,Xiao, H. L..,Wang, C. M..,Jiang, L. J..,...&Kang, H..(2011).The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors.EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,55(3),5.
MLA	Lin, D. F.,et al."The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors".EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS 55.3(2011):5.