The influence of the InGaN back-barrier on the properties of Al0.3Ga0.7N/AlN/GaN/InGaN/GaN structure

doi:10.1051/epjap/2011110184

IMR OpenIR

	The influence of the InGaN back-barrier on the properties of Al0.3Ga0.7N/AlN/GaN/InGaN/GaN structure
	Bi, Y.1; Wang, X. L.1,2; Xiao, H. L.1,2; Wang, C. M.1,2; Peng, E. C.1; Lin, D. F.1; Feng, C.1,2; Jiang, L. J.1,2
通讯作者	Bi, Y.(ybi@semi.ac.cn)
	2011-07-01
发表期刊	EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
ISSN	1286-0042
卷号	55 期号:1 页码:5
摘要	This is a theoretical study of the InGaN back-barrier on the properties of the Al0.3Ga0.7N/AlN/GaN/InGaN/GaN HEMT structure by self-consistently solving coupled Schrodinger and Poisson equations. Our calculation shows that by increasing the indium composition, the conduction band of the GaN buffer layer is raised and the confinement of 2DEG is improved. However, the additional quantum well formed by InGaN becomes deeper, inducing and confining more electrons in it. Another conductive channel is formed which may impair the device performance. With the increasing InGaN thickness, the well depth remains the same and the conduction band of GaN buffer layer rises, enhancing the confinement of the 2DEG without inducing more electrons in the well. The 2DEG sheet density decreases slightly with the indium composition and the physical mechanism is discussed. Low indium composition and thick InGaN back-barrier layer are beneficial to mitigate the short-channel effects, especially for high-frequency devices.
资助者	Knowledge Innovation Engineering of Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China ; Chinese Academy of Sciences
DOI	10.1051/epjap/2011110184
收录类别	SCI
语种	英语
资助项目	Knowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02]
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000292960600002
出版者	CAMBRIDGE UNIV PRESS
引用统计	被引频次：7[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/104472
专题	中国科学院金属研究所
通讯作者	Bi, Y.
作者单位	1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Bi, Y.,Wang, X. L.,Xiao, H. L.,et al. The influence of the InGaN back-barrier on the properties of Al0.3Ga0.7N/AlN/GaN/InGaN/GaN structure[J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,2011,55(1):5.
APA	Bi, Y..,Wang, X. L..,Xiao, H. L..,Wang, C. M..,Peng, E. C..,...&Jiang, L. J..(2011).The influence of the InGaN back-barrier on the properties of Al0.3Ga0.7N/AlN/GaN/InGaN/GaN structure.EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,55(1),5.
MLA	Bi, Y.,et al."The influence of the InGaN back-barrier on the properties of Al0.3Ga0.7N/AlN/GaN/InGaN/GaN structure".EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS 55.1(2011):5.